Transistors including gate dielectric layers having different nitrogen concentrations and related structures

摘要

An electronic device on a semiconductor substrate can include first and second field effect transistors on a substrate. In particular, the first field effect transistor includes a first gate dielectric layer having a first nitrogen concentration, and the second field effect transistor includes a second gate dielectric layer having a second nitrogen concentration lower than the first nitrogen concentration. More particularly, the first field effect transistor can be a PMOS transistor, and the second field effect transistor can be an NMOS transistor. Related methods are also discussed.