发明名称 Halbleiterspeicherbauelement
摘要 According to the invention, a plurality of digital-analogue converters (60, 61) and analogue-digital converters are positioned in the data lines (20, 21) between the connection contacts (3) and the memory cells (1), in such a way that the reading, writing and control of the memory takes place by analogue data transfers instead of the previous digital signatures. It is therefore possible to read, by means of a single connection contact, the same quantity of data, which would usually necessitate several connection contact surfaces (pads). Respective contact surfaces for the analogue line address and the analogue column address are sufficient for addressing the memory cells, said addresses being converted into digital addresses using analogue-digital converters.
申请公布号 DE10120054(A1) 申请公布日期 2002.11.07
申请号 DE20011020054 申请日期 2001.04.24
申请人 INFINEON TECHNOLOGIES AG 发明人 BAENISCH, ANDREAS;ZIMMERMANN, ELLEN;OBERGRUSSBERGER, XAVER
分类号 G11C7/16;(IPC1-7):G11C7/00 主分类号 G11C7/16
代理机构 代理人
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