| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of improving the yield and productivity of the semiconductor device by flatly forming isolating layers at a cell portion and a peripheral portion. CONSTITUTION: After forming an insulating layer on the upper portion of a semiconductor substrate(11), a narrow trench(19) and a wide trench are formed at a cell portion(100) and a peripheral portion(200) by carrying out a photolithography process using an isolation mask, respectively. After depositing a buried insulating layer on the resultant structure, the first isolation layer of the narrow trench and an insulating spacer of the wide trench are simultaneously formed by carrying out an anisotropic etching process on the buried insulating layer. After forming a photoresist pattern on the resultant structure for partially exposing the insulating spacer of the wide trench, an ion implantation is carried out by using the photoresist pattern as a mask. After removing the photoresist pattern, the second isolation layer is formed in the wide trench.
|
