ION IMPLANTATION METHOD FOR ANALYZING IMPURITY DISTRIBUTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An ion implantation method for analyzing the impurity distribution of a semiconductor device is provided to be capable of accurately detecting the distribution of implanted ions by using an oxide layer having a predetermined thickness. CONSTITUTION: An insulating layer having a predetermined thickness is formed on the upper portion of a wafer. An ion implantation is carried out at the insulating layer by using predetermined ion implantation energy. A heat treatment is carried out at the resultant structure at the predetermined temperature under predetermined condition. Then, the insulating layer is removed. The distribution of the implanted ions is detected by measuring the surface resistance of the surface of the wafer. Preferably, an oxide layer is used as the insulating layer.