| 摘要 |
PURPOSE: To provide a semiconductor memory device having excellent element characteristics with a high integration density by realizing a technology which can reduce a memory cell size while suppressing leakage current. CONSTITUTION: In a semiconductor device having a SRAM in which a memory cell comprises a flip-flop circuit consisting of a pair of drive transistors and a pair of load transistors, and a pair of transfer transistors, each load transistor has a LDD structure comprising a gate electrode formed on a semiconductor substrate through a gate insulation film, LDD regions formed on both sides of the gate electrode as low concentration impurity diffused regions, and source/ drain regions as high concentration impurity diffused regions. The clearance between a contact connected to a source region and a gate electrode in the gate longitudinal direction is smaller than the width of a LDD region in between a gate electrode and a source region in the gate longitudinal direction, and a contact connected to a drain region is arranged so that the contact is out of touch with 21 LDD region on a drain region side.
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