INDUCTIVE COUPLING TYPE PLASMA GENERATOR HAVING LOW ASPECT RATIO

摘要

PURPOSE: An inductive coupling type plasma generator having a low aspect ratio is provided to obtain an aspect ratio for etching an oxide layer of a semiconductor by lowering temperature of the inductive coupling type plasma generator and reducing volume of a chamber. CONSTITUTION: A plasma generator is formed with a gas implantation hole(11), a vacuum pump(12), a chamber(10), a chuck(20), and an antenna(30). The gas implantation hole(11) is used for implanting a reaction gas. The vacuum pump(12) is used for forming a vacuum in the inside of the plasma generator or exhausting the reaction gas from the inside of the plasma generator. A gas exhaust hole(13) is formed in the chamber(10). The chuck(20) is formed in the inside of the chamber(10) in order to load a processed object. The antenna(30) is installed at an upper portion of the chamber(10). The RF(Radio Frequency) power is applied to the antenna(30). The antenna(30) is formed by winding two twisted antennas around a flat doughnut-shaped bobbin.