| 摘要 |
PROBLEM TO BE SOLVED: To provide a defect evaluation method capable of precisely and rapidly preparing a flaky sample for electron microscope observation by a converged ion beam sample preparing device in relation to a semiconductor crystal including an internal defect used as an observation object and capable of evaluating the crystalline defect in detail by observing the flaky sample with an electron microscope. SOLUTION: This defect evaluation method for a semiconductor crystal is characterized in that the position and the depth of the internal defect of the observation object existing in the semiconductor crystal are determined, the internal defect is brought closer to the vicinity of the surface of the semiconductor crystal by removing the semiconductor crystal up to a region slightly shallower than the depth of the internal defect, thereafter the flaky sample for electron microscope observation is prepared by machining the semiconductor crystal with the converged ion beam sample preparing device, and the flaky sample is evaluated by the electron microscope.
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