| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve electron mobility of a TFT. SOLUTION: A ZrO2 film or an HfO2 film or a CaF2 film, whose lattice constant is close to that of silicon, is formed under a polycrystalline silicon film, that is to serve as a channel layer so as to improve the polycrystalline silicon film in regularity of atomic arrangement. Therefore, the polycrystalline silicon film can be improved in crystallinity, so that electron mobility is improved.</p> |
