| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate field effect transistor which is equipped with a gate electrode of length about 2.0μm or smaller, operates on a high power supply voltage (10 V or above), and is capable of markedly reducing a leakage current when the polarity of the gate electrode is opposite to that of a channel. SOLUTION: This manufacturing method comprises a first process of implanting ions into a semiconductor region, from above a gate insulating film after the gate insulating film has been formed on the surface of the semiconductor region, a second process of etching the gate insulating film as deep as 4 to 10 nm after ions have been implanted from above the gate insulating film, a third process of performing a thermal oxidation process on the gate insulating film in a diluted gas atmosphere which contains 0.1 to 1% oxygen (O2 ) or water (H2 O), so as to increase the thickness of the gate insulating film, from 4 to 15 nm after the gate insulating is etched, a fourth process of forming a gate electrode, a fifth process of forming an LDD region whose polarity is opposite to that of the semiconductor region, and a sixth process of forming a source and a drain region, whose polarities are opposite to that of the semiconductor region.
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