| 摘要 |
A semiconductor device manufacturing method is disclosed which is capable of manufacturing a semiconductor device of constant finished dimensions as designed even when a material which is difficult to increase etch selectivity to a silicon film in a gate electrode or wiring structure is used for an anti-reflection coating, and which is also capable of achieving finer patterning through the use of a silicon oxide film or the like as a hard mask. For example, a silicon oxy-nitride film and a silicon oxide film are used for an anti-reflection coating (56) and a hard mask (55), respectively, to provide etch selectivity therebetween. In etching of the anti-reflection coating (56) and the hard mask (55), the hard mask (55) such as a silicon oxide film is not completely etched in order to leave a non-single crystalline silicon film (50) covered, under which condition the anti-reflection coating (56) is removed.
|
