| 发明名称 |
Semiconductor device and wiring forming method in semiconductor device |
| 摘要 |
The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.
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| 申请公布号 |
US2002160599(A1) |
申请公布日期 |
2002.10.31 |
| 申请号 |
US20020107568 |
申请日期 |
2002.03.27 |
| 申请人 |
AOYAMA JUNICHI;KOBAYASHI TOSHIO |
发明人 |
AOYAMA JUNICHI;KOBAYASHI TOSHIO |
| 分类号 |
H01L21/312;H01L21/316;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/312 |
| 代理机构 |
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