| 摘要 |
PROBLEM TO BE SOLVED: To restrain the aspect ratio of a contact hole connected from an upper layer to a semiconductor substrate, and to improve the workability of the contact hole. SOLUTION: For a semiconductor device, a capacitor, comprising a capacitor upper part electrode 14, a capacitor lower part electrode 12 and a capacitor dielectric film 13, formed through an interlayer insulation film 11 in a memory cell region on the semiconductor substrate 1. On the inter-layer insulation film 11, in a region other than the memory cell region, a storage node pad electrode 20 in a prescribed shape, composed of the film of the same layer as the capacitor lower part electrode 12, is formed. A contact plug 17, connected from the upper layer to the semiconductor substrate 1, is connected via the storage node pad electrode 20 to the semiconductor substrate 1, and the aspect ratio of the contact hole is reduced. |
