MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: To reduce microscratches due to chemical-mechanical polishing. CONSTITUTION: Polishing slurry S right before supplied to the space between a polishing pad 102 and the polished surface of a wafer 1 is diluted with pure water. The polishing slurry S is thus diluted with the pure water and increased in amount to decrease the density of cohering particles in the polishing slurry S. The mixing rate of the polishing slurry S and pure water is about 1 (polishing slurry):(1 to 1.2) (pure water), and the silica density of the polishing slurry S diluted is adjusted to 3 to 9 wt.%, preferably 4 to 8 wt.%, and more preferably about 8 wt.%.