Insulated gate bipolar transistor,申请号GB19970027143-传众专利搜索

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发明名称	Insulated gate bipolar transistor
摘要
申请公布号	GB2332774(B)	申请公布日期	2002.10.30
申请号	GB19970027143	申请日期	1997.12.24
申请人	* PLESSEY SEMICONDUCTORS LIMITED;* MITEL SEMICONDUCTOR LIMITED;* DYNEX SEMICONDUCTOR LIMITED	发明人	JAMES * THOMSON;IAN FRANCIS * DEVINY
分类号	H01L21/285;H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L21/768;H01L21/331;H01L21/336;H01L29/40	主分类号	H01L21/285
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