Fabrication method of semiconductor device with HSG configuration,申请号GB19990002408-传众专利搜索

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发明名称	Fabrication method of semiconductor device with HSG configuration
摘要
申请公布号	GB2334146(B)	申请公布日期	2002.10.30
申请号	GB19990002408	申请日期	1999.02.03
申请人	* NEC CORPORATION	发明人	ICHIRO * HONMA
分类号	H01L27/04;H01L21/02;H01L21/321;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/320	主分类号	H01L27/04
代理机构		代理人
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地址

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