| 摘要 |
PROBLEM TO BE SOLVED: To suppress di/dt and dV/di while preventing the increase in time delay of the switching in a voltage-controlled-type self-quenching-type semiconductor device such as an IGBT(Insulation Gate Bipolar Transistor). SOLUTION: A switching circuit 6 tums on a transistor 8 (10) based on the ON (OFF) signal of an ON/OFF signal 101 and applies a power supply 15 (16) to the gate of an IGBT 25 via a low-value gate resistor 12 (14). Then, the gate capacity of the IGBT is rapidly charged (discharged) and at the same time VGB increases (decreases), and current Ic begins to increase (decrease) with a small delay time. At this point, a voltage 106 is generated at an inductance 36 being connected between an auxiliary emitter terminal Es and a main emitter terminal Em of the IGBT 25, thus activating a one-short circuit 32 (33). A switching circuit 6 turns off the transistors 8 (10) and 7 (9) due to the one-shot output 102 (103) at this point, switches a gate resistance to 11 (13) with a larger value and relaxes the rising (trailing) speed of Ic. |
