| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which a semiconductor light emitting element having a stable quality can be manufactured by growing a semiconductor layer so that the layer may have a desired carrier concentration without being influenced by the impurity contained in the semiconductor layer which is finally grown in the preceding batch processing when semiconductor layers are continuously laminated upon another by batch processing by means of an MOCVD system. SOLUTION: After first batch processing ends, a dummy substrate is set and a first step of growing a semiconductor layer having a conductivity (for example, n-type conductivity) which is different from that (for example, p-type conductivity) of the uppermost semiconductor layer laminated in the first batch processing is performed. Then second batch processing which is similar to the first batch processing is added and, in addition, the step of growing an n-type layer on the dummy substrate is repeated. |
