发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of preventing the malfunction of a refresh-executing circuit in a period when a refresh-clock at the time of supplying power is unstable by stopping a refresh clock. SOLUTION: This semiconductor memory is provided with a refresh-time circuit for generating a refresh-clock, a refresh-executing circuit for executing refresh-operation successively one by one of a plurality of memory cells an object based on a period of a refresh-clock, a refresh-control circuit for stopping transmission of a refresh-clock for the refresh-executing circuit from the refresh- timer circuit in the prescribed period when the period of the refresh-clock is apt to be unstable between the refresh-timer circuit and the refresh-executing circuit. Thereby, the malfunction of the refresh-executing circuit can be prevented.
申请公布号 JP2002313080(A) 申请公布日期 2002.10.25
申请号 JP20010115457 申请日期 2001.04.13
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIMIZU YOSHIYUKI;TSUKIDE MASAKI;SENDA MINORU
分类号 G01R31/28;G11C11/403;G11C11/406;H01L21/66;(IPC1-7):G11C11/406 主分类号 G01R31/28
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