| 摘要 |
PROBLEM TO BE SOLVED: To provide the crystal growth method of a p-type group III nitride semiconductor by which the activation rate of a p-type dopant can be improved and high carrier concentration exceeding 10<18> cm<-3> order be obtained. SOLUTION: In this crystal growth method of a p-type group III nitride semiconductor, hydrogen as well as p-type dopant is doped or diffused in the p-type group III nitride semiconductor by controlling the partial pressure of hydrogen in an atmosphere, in at least one step during crystal growth of a group III nitride semiconductor doped with the p-type dopant, during cooling after the crystal growth, and during annealing after the crystal growth.
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