| 摘要 |
PROBLEM TO BE SOLVED: To attain a high breakdown voltage in an inverter circuit, even if one of MOSFETs constituting a high potential-side switch and a low potential- side switch is low in the breakdown voltage. SOLUTION: The high potential-side switch 106 is provided with a switching circuit 100 which includes a first intermediate breakdown voltage, p-channel MOSFET 21 and a breakdown protection circuit 101 including at least one second intermediate breakdown voltage, p-channel MOSFET 22, 23, and 24 connected in series with the first intermediate breakdown voltage, p-channel MOSFET. A low potential-side switch 107 is provided with a first high- breakdown voltage, an n-channel MOSFET 31 connected in series with the second intermediate breakdown voltage, p-channel MOSFET. |
