| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor thin-film manufacturing device capable of simplifying a manufacturing process, so that a single-crystal thin film is formed on a substrate such as glass at a low cost and at a high throughput. SOLUTION: There are provided a laser radiation part 1 comprising a mechanism to project laser light to a prescribed region on the surface of a semiconductor crystal 6 into which a hydrogen ion is implanted, a substrate holding part 3 comprising a mechanism to align relative to the semiconductor crystal 6, a semiconductor crystal holding part 7 which comprises a mechanism to align relative to a substrate 5 forming a semiconductor thin film, and a pressure plate 4 for raising adhesion between the semiconductor crystal 6 and the substrate 5. Based on the semiconductor thin film formation principle, which is based on 'the method for forming semiconductor thin film' (patent application number 2000-398760), a laser light irradiation region 8 of the semiconductor single crystal 6 into which ions are implanted peels into a thin film, and a peeled semiconductor single crystal is bonded to the substrate 5 which is tightly contacted, and thus a semiconductor single crystal thin film is formed on the surface of the substrate 5.
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