| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where electric characteristics of a gate insulating film near an element isolation region are equal to those of a gate insulating film other than the element isolation region vicinity, and to provide a method for manufacturing the semiconductor device. SOLUTION: The semiconductor device has a semiconductor substrate 1, a shallow trench element isolation region 13 that is formed in a groove section provided in the semiconductor substrate 1, a source/drain region that is formed in the semiconductor substrate 1 and uses a pinching semiconductor substrate surface as a channel, gate insulating films 10, 11, and 12 that are formed on the semiconductor substrate and have film thicknesses being equal at the center section of the channel and a section being in contact with the shallow trench element isolation region, and gate electrodes 14 and 15 that are formed on the gate insulating films 10, 11, and 12.
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