| 摘要 |
PROBLEM TO BE SOLVED: To establish a stable method for manufacturing a mask ROM. SOLUTION: The semiconductor device has a gate electrode 8 formed on a semiconductor substrate 1 across a gate insulating film 5, a source-drain area formed adjacently to the gate electrode 8, and an Al wire 15 formed across an inter-layer insulating film 14 covering the gate electrode 8, and is constituted by implanting impurity ions into a substrate surface layer by using a photoresist 17 formed on the Al wire 14 and the Al wire 15 as a mask. The photoresist 17 has different opening parts 17a and 17b (opening diameter: X3<X4) on an area where the impurity ions are implanted into some element and an area where the impurity ions are implanted into adjacent elements. |
