| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high dielectric thin film exhibiting performance sufficient as the gate insulation film of a MOSFET or the capacitor insulation film of a DRAM, its manufacturing method and a film-forming method for a dielectric film. SOLUTION: The semiconductor device has such a multilayer structure that a gate electrode 5b of Si or SiGe is formed on a silicon substrate 1 through a dielectric film of three layer structure including a first dielectric film 3 of amorphous metal oxide, e.g. Al2 O3 , a second dielectric film 4 of crystalline oxide, e.g. ZrO2 or HfO2 , and a third dielectric film 6 of amorphous metal oxide, e.g. Al2 O3 . Since an amorphous metal oxide is interposed between an crystalline oxide and Si, the crystalline oxide can be formed with a uniform film thickness while suppressing the reaction of Zr and Si in a reducing atmosphere at the time of forming an electrode or in an impurity ion implanting process or a heat treating process thus avoiding an increase of leak current or lowering of capacity. |
