| 摘要 |
PROBLEM TO BE SOLVED: To obtain a manufacturing method for a semiconductor device which can adequately avoid a trouble caused by the implantation of N-type ions into a cell-cell separation area of a memory cell. SOLUTION: To form a memory cell and a peripheral Nch transistor on a semiconductor substrate, this method includes a process of implanting boron ions into the drain area of the memory cell including the cell-cell separation area when desired ions are implanted into the drain area of the memory cell and a process of implanting desired N-type ions into the peripheral Nch transistor and also implanting N-type ions into the memory cell part including the cell-cell separation area. Here, implantation energy and an ion implantation amount are so selected that the total amount of the boron (P-type) ions is larger than the total amount of the N-type ions in the cell-cell separation area for implanted ion species reaching an Si substrate after penetrating an oxide film.
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