| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SMAE |
| 摘要 |
A semiconductor device comprises a lower electrode shaped as a convex formed on a semiconductor substrate having crystals, a grain boundary between adjacent crystals being perpendicular to a side of the lower electrode, a capacitor insulating film covering the lower electrode, and an upper electrode formed on the capacitor insulating film.
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| 申请公布号 |
US2002153552(A1) |
申请公布日期 |
2002.10.24 |
| 申请号 |
US19990469190 |
申请日期 |
1999.12.21 |
| 申请人 |
HIEDA KATSUHIKO;EGUCHI KAZUHIRO |
发明人 |
HIEDA KATSUHIKO;EGUCHI KAZUHIRO |
| 分类号 |
H01L27/108;H01L21/02;H01L21/8242;(IPC1-7):H01L31/119;H01L29/94;H01L29/76 |
主分类号 |
H01L27/108 |
| 代理机构 |
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代理人 |
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| 主权项 |
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