| 摘要 |
<p>Systems and methods for ion implantation of dopant materials into semiconductor wafers are provided. An ion implanter includes an ion source for generating an ion beam, a support platen for supporting a workpiece during ion implantation, a scan mechanism for scanning the workpiece relative to the ion beam, an occluder for blocking at least a portion of the ion beam from reaching the workpiece during at least a portion of workpiece scanning, and an occluder translator for translating the occluder during workpiece scanning. The scan mechanism produces translation of the workpiece and spinning of the workpiece about an axis of rotation that is located at or near the center of the workpiece. The ion implanter may include a uniformity control system for controlling the dose distribution of ions implanted into the workpiece.</p> |
