| 摘要 |
PURPOSE: A plasma process apparatus is provided, which generates uniform plasma through an overall large panel. CONSTITUTION: A plasma process apparatus(200) includes a vacuum chamber(10) for ensuring a plasma reaction area with having a gas inlet for inflowing a gas and a gas outlet for exhausting the gas, a substrate supporting member(20) installed on a bottom of the vacuum chamber(10) for supporting a substrate to be plasma processed, a vacuum window(30) for sealing a upper opening of the vacuum chamber(10), a Faraday shield part(40) placed on a top of the vacuum window(30) for shielding an electromagnetic wave, an inductive coil(50) installed on a top of the Faraday shield part(40), a pair of high frequency generators(70,72) for generating and supplying high frequency waves to the inductive coil(50) and the substrate supporting member(20). respectively, a pair of high frequency matching networks(60,62) for matching the high frequency waves and a gas distributor(210) for distributing the gas into the substrate.
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