| 摘要 |
PURPOSE: A baffle of an etch apparatus for fabricating a semiconductor device is provided to minimize generation of a polymer adhered to an inner wall of a process chamber in an etch process. CONSTITUTION: A reaction gas supply hole(121) is formed on an upper face of a process chamber(120). A gate(127) is formed at one side of the process chamber(120). An exhaust hole(123) is formed at the other side of the process chamber(120). A depo shield(125) is installed on an upper inner wall of the process chamber(120). A reaction gas supply unit(140) is formed with a reaction gas supply portion(145), a gas supply pipe(147), and a gas supply plate(143) in order to supply a reaction gas to the process chamber(120). An exhaust unit(160) is connected with the exhaust hole(123) and an exhaust pipe(165) in order to exhaust polymer to the outside. A wafer loading unit(180) is formed with a wafer elevator(181), an electrostatic chuck(183), a focus ring(189), and a baffle(185). The baffle(185) is used for supplying uniformly the reaction gas to an upper portion and a lower portion of the process chamber(120).
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