Parallel test circuit of semiconductor memory device,申请号GB19990030730-传众专利搜索

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发明名称	Parallel test circuit of semiconductor memory device
摘要
申请公布号	GB2345345(B)	申请公布日期	2002.10.23
申请号	GB19990030730	申请日期	1999.12.29
申请人	* HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.	发明人	YOUNG BO * SHIM;JONG KYEONG * SHIN
分类号	G01R31/28;G11C11/401;G11C11/413;G11C29/34;(IPC1-7):G11C29/00	主分类号	G01R31/28
代理机构		代理人
主权项
地址

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