| 摘要 |
PROBLEM TO BE SOLVED: To provide an OPC(optical proximity correction) mask producing method by which the dispersion of line width of a pattern practically formed on a wafer is suppressed by performing simulation faithfully reflecting the influence of space dependency, an OPC mask and a chip. SOLUTION: The measured data of a new test pattern for a testing mask are obtained by measuring the line width of each gate pattern. Simulation is calculated on the basis of the measured data and the design data of the new test pattern and the simulation data of the new test pattern whose shape is deformed by an optical proximity effect are outputted. When the accuracy of simulation is accepted, a kernel is generated. Simulation is performed by the kernel. |
