发明名称 |
SEMICONDUCTOR PRESSURE SENSOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor improved in airtightness holding characteristic. SOLUTION: This semiconductor pressure sensor comprises a semiconductor chip for converting the pressure change of a measuring medium to an electric signal, a resin case for housing the semiconductor chip, a lead terminal drawn out of the resin case and integrally molded therewith, and a connecting member for electrically connecting the semiconductor chip to the lead terminal. The resin case is formed of a thermosetting resin, and the difference between the average linear expansion coefficient from ordinary temperature to post-cure temperature of the thermosetting resin and the linear expansion coefficient of a metal material constituting the lead terminal is set to 3 ppm/ deg.C or less.
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申请公布号 |
JP2002310829(A) |
申请公布日期 |
2002.10.23 |
申请号 |
JP20010120891 |
申请日期 |
2001.04.19 |
申请人 |
HITACHI LTD;FUJI ELECTRIC CO LTD |
发明人 |
MIYAZAKI ATSUSHI;KIKUCHI KATSUHIKO;EGUCHI KUNIYUKI;KAMIYANAGI KATSUMICHI;SAITO KAZUNORI;ASHINO KIMIYASU |
分类号 |
G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 |
主分类号 |
G01L9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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