发明名称 SEMICONDUCTOR PRESSURE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor improved in airtightness holding characteristic. SOLUTION: This semiconductor pressure sensor comprises a semiconductor chip for converting the pressure change of a measuring medium to an electric signal, a resin case for housing the semiconductor chip, a lead terminal drawn out of the resin case and integrally molded therewith, and a connecting member for electrically connecting the semiconductor chip to the lead terminal. The resin case is formed of a thermosetting resin, and the difference between the average linear expansion coefficient from ordinary temperature to post-cure temperature of the thermosetting resin and the linear expansion coefficient of a metal material constituting the lead terminal is set to 3 ppm/ deg.C or less.
申请公布号 JP2002310829(A) 申请公布日期 2002.10.23
申请号 JP20010120891 申请日期 2001.04.19
申请人 HITACHI LTD;FUJI ELECTRIC CO LTD 发明人 MIYAZAKI ATSUSHI;KIKUCHI KATSUHIKO;EGUCHI KUNIYUKI;KAMIYANAGI KATSUMICHI;SAITO KAZUNORI;ASHINO KIMIYASU
分类号 G01L9/04;G01L9/00;H01L29/84;(IPC1-7):G01L9/04 主分类号 G01L9/04
代理机构 代理人
主权项
地址