发明名称 Pattern forming method
摘要 In a pattern forming method, a trench is formed on a flat base. A pattern material is arranged only in and around the trench so as to project upward from the surface of the base and to be larger than the opening of the trench. The pattern material projecting from the surface of the base is removed by chemical mechanical polishing (CMP) so as to be flush with the upper surface of the base.
申请公布号 US6468895(B2) 申请公布日期 2002.10.22
申请号 US20010826029 申请日期 2001.04.03
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 ISHII HIROMU;YAGI SHOUJI;MACHIDA KATSUYUKI;SAITO KUNIO;NAGATSUMA TADAO;KYURAGI HAKARU
分类号 H01L21/321;H01L21/768;(IPC1-7):H04L21/476 主分类号 H01L21/321
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