发明名称 |
Method for manufacturing a titanium nitride thin film |
摘要 |
A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0<PNH3/PTDAAT<10 with respect to the partial pressure PNH3 of the added ammonia gas.
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申请公布号 |
US6468604(B1) |
申请公布日期 |
2002.10.22 |
申请号 |
US20000453889 |
申请日期 |
2000.03.03 |
申请人 |
ANELVA CORPORATION |
发明人 |
TOBE RYOKI;DOI HIROSHI;SEKIGUCHI ATSUSHI |
分类号 |
C23C16/34;(IPC1-7):C23C8/00 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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