发明名称 Method for manufacturing a titanium nitride thin film
摘要 A method of manufacturing a titanium nitride thin film at the surface of a substrate the chemical vapor deposition method (CVD method) includes supplying trakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure PTDAAT of the source-material gas is set in a range of 0<PNH3/PTDAAT<10 with respect to the partial pressure PNH3 of the added ammonia gas.
申请公布号 US6468604(B1) 申请公布日期 2002.10.22
申请号 US20000453889 申请日期 2000.03.03
申请人 ANELVA CORPORATION 发明人 TOBE RYOKI;DOI HIROSHI;SEKIGUCHI ATSUSHI
分类号 C23C16/34;(IPC1-7):C23C8/00 主分类号 C23C16/34
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