| 摘要 |
A process for forming a metal-insulator-metal (MIM), capacitor structure, in which platinum is employed for both the capacitor top plate and storage node structures, while a high dielectric constant layer, such as BaTiO3 is used for the capacitor dielectric layer, has been developed. Prior to formation of the MIM capacitor structure, an underlying, platinum storage node plug structure is formed in a narrow diameter opening, allowing communication between the MIM capacitor structure, and regions of an underlying transfer gate transistor, to be realized. A thin ruthenium shape is used as a seed layer to allow an electroless plating procedure to be employed for attainment of the platinum storage node plug structure.
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