TRANSMITTANCE ADJUSTMENT MASK AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A transmittance adjustment mask is provided to fabricate uniform critical dimension of a dense pattern and an isolated pattern formed on a wafer, by equally controlling the light intensity corresponding to an edge in a dense feature and the light intensity corresponding to an edge in an isolated feature. CONSTITUTION: A pattern corresponding to an integrated circuit is transcribed from a mask to a semiconductor substrate(10) by using an exposure apparatus. A plurality of features include at least one edge, corresponding to circuit elements for forming the integrated circuit on the mask and having a predetermined minimum dimension. At least one half-transparent dummy feature(14) is formed in parallel with the isolated edge(12a) in a position separated from the isolated edge by a predetermined distance so that the light intensity of a portion corresponding to the dense edge of the features is almost the same as the light intensity of a portion corresponding to the isolated edge.