POSITIVE TYPE PHOTORESIST COMPOSITION

摘要

PURPOSE: To provide a positive type photoresist composition which solves the problem of development defects in the production of semiconductor devices and is excellent also in suitability to halftone exposure. CONSTITUTION: The positive type photoresist composition contains: a compound which contains at least (A1) a sulfonate compound of a sulfonium and (A2) a sulfonate compound or a disulfonyl diazomethane compound of N- hydroxyimide and generates an acid when irradiated with active light or radiation; and a resin which contains repeating units each having a specified lactone structure and is decomposed by the action of the acid to have its alkali solubility increased.