| 摘要 |
PURPOSE: To provide a treating apparatus with plasma, with which undesirable discharge generated at the back surface of a ground electrode is surely suppressed when a substrate mounted on the ground electrode is subjected to a film depositing treatment using a high frequency belonging a VHF band. CONSTITUTION: The treating apparatus has a high frequency electrode 13 and a ground electrode 14, each provided parallel to a reaction vessel 11. The ground electrode 14 is fixed to a ground potential part (flange 20) by an electroconductive column 19. The surface of the connection part (including parts other than the surface of the ground electrode 14, the column 19 or the like) from the ground electrode 14 to the ground potential part is covered with an insulating material 22 being a high frequency propagation medium, and further the whole surface, except a high frequency introducing part, of the insulating material 22 is covered with an electroconductive member 23.
|
