METHOD FOR FABRICATING MINIMUM CHANNEL MOS DEVICE

摘要

PURPOSE: A method for fabricating a minimum channel MOS device is provided to form a thin inversion layer under a sidewall by using an insulating material having a high dielectric constant as the sidewall. CONSTITUTION: An oxide layer(402) is formed on a surface of a p-substrate(401). An n+ polysilicon is defined as a gate(404) by using a minimum patterning technique. A sidewall(406) is formed on an upper face of the p-substrate(401) and sides of the gate(404) and the oxide layer(402) by using an insulating material having a high dielectric constant. A p0 halo region is formed in the p-substrate(401) by implanting p0 halo ions into the p-substrate(401). A source/drain region is formed on the p-substrate(401) by implanting n+ ions into the p-substrate(401).