| 摘要 |
PURPOSE: Provided are a monomer for a chemical amplification type negative photoresist, a chemical amplification type negative photoresist polymer produced by using the monomer, and a chemical amplification type negative photoresist composition containing the polymer, which can form a pattern with high resolution. CONSTITUTION: The monomer is represented by the formula 2 or 3, the polymer is selected from the formula 1 or 4, and the photoresist composition contains the polymer. In the formula, R1 is H or CH3, R2 is (R)alpha(CH2)betaR' or (R)alpha((CH2)mO)gammaR', R3 is C1-C5 saturated alkyl, unsaturated alkyl, aromatic, ether, carbonyl, amine, or alcohol, R4 is (R)alpha(CH2)beta or (R)alpha((CH2)mO)gammaR+, R5 and R6 are identically or independently H or OH, R7 and R8 are identically or independently (R)alpha(CH2)beta or (R)alpha((CH2)mO)gammaR+, x and y are each 0.1-0.9, x+y is 1, wherein R is CO, CO2, O, OCO or OCO2, R' is O, CO2, or OCO2, R+ is alkyl, alpha is 0 or 1, beta is 0-5, m is 1 or 2, and gamma is 1-5.
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