| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device, having a metal wiring where disconnection or the like is hardly generated and reliability is high, and to provide a method for manufacturing the device. SOLUTION: This semiconductor integrated circuit device is provided with a semiconductor substrate 10; an amorphous insulating film 12 formed on the semiconductor substrate 10; a metal conductor layer 18 which is formed above the amorphous insulation film 12, constitutes the wiring and contains aluminum; and a crystal lattice information transfer layer 16, which is arranged between the amorphous insulation film 12 and the metal conductor layer 18, and contains a face, in which at least a (002) face of titanium becomes a superior orientation face as a face for transferring information of crystal lattice to the metal conductor layer 18.
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