| 摘要 |
PROBLEM TO BE SOLVED: To resolve an antinomic problem in a conventional visual inspection method of frequent occurrence of misreports or deterioration in the detection power due to determination using the same threshold even though dispersed states of intensity of reflected light or scattered light are different depending upon existence of lower layer wiring, causing deterioration in reliability of inspection result information, and requiring a great deal of time and labor to conduct a recheck of misreported portions by means of a manual inspection using a microscope after visual inspection when many misreports occur. SOLUTION: In the visual inspection method, a defect of a pattern in uppermost layer wiring is detected by optically scanning the surface of a semiconductor wafer 2 with wiring formed in a multilayer and comparing acquired wiring pattern information with a threshold determined based on reference pattern information. It is characterized by that the reference pattern information corresponds to an existence of wiring in layers lower than the uppermost layer wiring.
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