| 摘要 |
PROBLEM TO BE SOLVED: To shorten the time required for the entire wafer process performed on a semiconductor storage device and the time required, until the product shipment of the device after data writing, and at the same time, to make the device produceable at a low cost. SOLUTION: This semiconductor storage device is provided with a plurality of unit cells 10a, 10b, and 10c formed on a substrate. Each unit cell is constituted of first and second transistors T1 and T2. The drain diffusion layers of the transistors T1 and T2 are connected to a common bit line. The gate electrodes of the transistors T1 and T2 are connected to a common word line. The threshold voltages of the transistors T1 and T2 are respectively set at prescribed values, in accordance with stored fixed data. In addition, the source diffusion layers of the transistors T1 and T2 are connected to a common source line or either one of the source diffusion layers is connected to the source line in accordance of the stored fixed data. |
