| 摘要 |
PROBLEM TO BE SOLVED: To provide a pad structure for semiconductor device and a production method therefor, with which highly reliable bond lift measures are taken onto a pad surface. SOLUTION: An electrode pad PAD is a practical alminium layer 11 connected with an internal conductive region, formed on a layer insulating film 10, such as SiO2 film and configured to be exposed on the opening part of a passivation film 12 of the top layer. A bonding wire not shown is connected to the electrode pad PAD, for example. The pattern exposure plane of the electrode pad PAD is configured, while having a rugged form by being reflected with a rugged pattern 101 formed on a layer insulating film 10 of the lower layer. Because of the rugged form, the connection area of the bonding wire is expanded. Further, the contact area of the alminium layer 11 and the layer insulating film 10 is increased due to the rugged pattern 101.
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