| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which a high speed refresh function is realized at low cost. SOLUTION: A potential of a bit line is detected by bit line potential detecting circuits 21, 22 having different detection levels, a volatile cell is specified by comparing the outputs by a latch set circuit 26, the compared result is set to a latch circuit 23, and write-in operation is performed by a page program method.</p> |
