MANUFACTURING METHOD FOR POLYCRYSTAL SILICON THIN FILM

摘要

PROBLEM TO BE SOLVED: To deposit a polycrystal silicon thin film on a glass substrate without heating or annealing silicon and quartz glass substrate. SOLUTION: First and second boxes 11 and 12 are communicated with each other, a pulse ion beam generation source is disposed in the first box 11, and a target and a substrate are disposed in the second box 12. The pulse ion beam generation source comprises a cathode 14 formed so as to surround an anode 13, and the solid target 17 disposed in the second box 12 is disposed in an inclined manner by the predetermined angle. The substrate 18 is supported by a supporting device 19 and disposed at the position facing the target 17. The voltage and the current are supplied to the anode 13 to operate the ion beam generation source and generate the ion beam. When the target 17 is irradiated with the beam, aberration plasma is generated in the target in the range of proton. The generated plasma is scattered perpendicular to the target surface and vapor-deposited on the substrate 18 to manufacture a thin film on the substrate 18.