| 发明名称 |
Method and structure for retarding high temperature agglomeration of silicides using alloys |
| 摘要 |
Complementary metal oxide semiconductor (CMOS) devices having metal silicide contacts that withstand the high temperature anneals used in activating the source/drain regions of the devices are provided by adding at least one alloying element to an initial metal layer used in forming the silicide.
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| 申请公布号 |
US2002151158(A1) |
申请公布日期 |
2002.10.17 |
| 申请号 |
US20020167733 |
申请日期 |
2002.06.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CABRAL CYRIL;CARRUTHERS ROY ARTHUR;HARPER JAMES MCKELL EDWIN;KOZLOWSKI PAUL MICHAEL;LAVOIE CHRISTIAN;NEWBURY JOSEPH SCOTT;ROY RONNEN ANDREW |
| 分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/4763;H01L21/8238;H01L27/092;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
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