发明名称 Semiconductor memory device having refreshing function
摘要 The semiconductor memory device of the invention has a refresh timer for generating a refresh clock, a refresh executing circuit for sequentially refreshing a plurality of memory cells part by part on the basis of the cycle of the refresh clock, and a refreshing control circuit disposed between the refresh timer and the refresh executing circuit, for stopping transmission of the refresh clock from the refresh timer to the refresh executing circuit in a predetermined period during which the cycle of the refresh clock is easy to become unstable. With the configuration, an erroneous operation of the refresh executing circuit can be prevented.
申请公布号 US2002149985(A1) 申请公布日期 2002.10.17
申请号 US20010971694 申请日期 2001.10.09
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SHIMIZU TADAYUKI;TSUKUDE MASAKI;SENDA MINORU
分类号 G01R31/28;G11C11/403;G11C11/406;H01L21/66;(IPC1-7):G11C7/00 主分类号 G01R31/28
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