发明名称 |
Nonvolatile memory cell, operating method of the same and nonvolatile memory array |
摘要 |
The present invention relates to a nonvolatile memory cell and/or array and a method of operating the same high integrated density nonvolatile memory cell enabling high integration density, low voltage programming and/or high speed programming, a method of programming same and a nonvolatile memory array. A p-well 101 is formed in a surface of a substrate 10 and a channel forming semiconductor region 110 is defined in a surface of the p-well 101 and separated by a first n+ region 121 and a second n+ region 122. A carrier-supplying portion (CS: carrier supply) 111 is formed coming into contact with the first n+ region 121 and a carrier-acceleration-injection portion 112 (AI: acceleration and injection) is in contact with the second n+ region 122 in the channel forming semiconductor region 110 wherein the carrier-supplying portion 111 and carrier-acceleration-injection portion 112 are in contact with each other.
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申请公布号 |
US2002149060(A1) |
申请公布日期 |
2002.10.17 |
申请号 |
US20020101659 |
申请日期 |
2002.03.20 |
申请人 |
HALO LSI, INC. |
发明人 |
OGURA SEIKI O.;HAYASHI YUTAKA |
分类号 |
G11C16/02;G11C16/04;G11C16/06;H01L21/28;H01L21/8247;H01L27/115;H01L27/12;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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