发明名称 Circuit technique to deal with floating body effects
摘要 A charge limiting system is provided that maintains the charge level of a body for a multiple MOSFET device structure. The multiple MOSFET device include a number of bodies linked to one another or a single body, such as a well, being employed for all devices. The single body or bodies are provided with at least one contact that extends to another layer, so that the body can be coupled to the charge limiting system. The charge limiting system includes a charge detector system that monitors the charge level on the body or bodies and a switching system for coupling the body or bodies to a fixed potential, if the charge level of the body or bodies reaches an unacceptable level. The switching system couples the body or bodies to ground for an npn type transistor and to VDD for pnp type transistors. The charge limiting system can include a timing device, so that the body can be coupled to the fixed potential for a predetermined period of time even after the charge level of the body or bodies falls below the threshold value. This ensures that the charge level on the body is sufficiently discharged.
申请公布号 US6466082(B1) 申请公布日期 2002.10.15
申请号 US20000573036 申请日期 2000.05.17
申请人 ADVANCED MICRO DEVICES, INC. 发明人 KRISHNAN SRINATH
分类号 H01L27/12;H01L29/786;(IPC1-7):G05F3/02 主分类号 H01L27/12
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